The P-N junction diode is a two-terminal device. (viii) Apparatus of the PN Junction Diode Experiment Experiment 1 V-I characteristics of diode 1 V-I CHARACTERISTICS OF DIODE AIM: To obtain V-I characteristics of PN junction diode. stream /Type /XObject Answer: b In this article, we learn about PN junction diode characteristics in detail â like how to bias a PN junction (Forward & Reverse bias methods), behavior of PN junction during forward & reverse bias setups, how to plot the VI characteristics, what is reverse breakdown and many other essential concepts regarding a PN junction diode. Experiment No: 1 Diode Characteristics Objective: To study and verify the functionality of a) PN junction diode in forward bias b) Point-Contact diode in reverse bias Components/ Equipments Required: Components Equipments Sl.No. Quiz Test Your Knowledge!! >> %���� A PN junction diode is formed when a single crystal of semiconductor is doped with acceptors impurities (Pentavalent) on one side and donor impurities (Trivalent) on the other side. /MediaBox [0 0 595.276 841.89] endobj Introduction: The semiconductor diode is formed by doping P-type impurity in one side and N-type of impurity in another side of the semiconductor crystal forming a p-n junction as shown in the following figure. The V-I characteristics of a diode can be forward or reverse. 4 0 obj << LAB 1.pdf - Experiment 1 V-I characteristics of diode V-I CHARACTERISTICS OF DIODE AIM To obtain V-I characteristics of PN junction diode Introduction, 1 out of 1 people found this document helpful, To obtain V-I characteristics of PN junction diode, The semiconductor diode is formed by doping P-type impurity in one side and N-type of, impurity in another side of the semiconductor crystal forming a p-n junction as shown in, At the junction initially free charge carriers from both side recombine forming negatively, charged ions in P side of junction(an atom in P-side accept electron and becomes, negatively charged ion) and positively charged ion on n side(an atom in n-side accepts, hole i.e. After some excess reverse voltage, the diode tends to conduct for some time and undergoes breakdown condition. /ColorSpace /DeviceRGB This was also to e xpand the studentâs knowledge and as well as his laboratory skills on the subject. Chapter 6. Due to two electrodes it ⦠Zero bias 2. /Length 1321 ]m#-tᣡ���]�R:��|E�.�e�z�{�h�a_u�x�B�ʝXB�I0G������Z���O���Έ�n��Ye����k~�� ��̮=�ӫ��d�X������� Normally the voltage is taken along the x-axis and current along y-axis. PN junction PN Junction Diode in forwarding Bias. We will then plot it to get the depen-dence. This type of current generated is referred to as Reverse Saturation Current. VOLTAGE-CURRENT CHARACTERISTICS OF A PN JUNCTION DIODE The junction voltage vs. current characteristic of an LED is similar to the V-I characteristics of diodes. 1 An experiment on the physics of the PN junction. /Font << /F16 7 0 R /F17 10 0 R /F27 13 0 R /F15 16 0 R >> Lab IV: Silicon Diode Characteristics â Page 4 Figure 1. to draw v-i characteristics of a p-n junction diode in forward bias and calculate diode resistance It generally shows the relation between bias voltage and current of a diode. and a current will flow from the anode to the cathode. /Width 258 ii) Junction Voltage vs. Current. ����ҧ CONCLUSION This experiment focuses on the investigation of the basic characteristics of a diode. [��R��N�4���y��N�t��3zܺ���[�=5�r��" �sS�"s���'="Uء|����(�Ix�ŝk\g�w���hIn �I��'z@����GR��vO� /Filter /FlateDecode EXPERIMENT 7:Observation of characteristics of a Zener diode Debangshu Mukherjee BS.c Physics,1st Year Chennai Mathematical Institute 7.11.2008 1 Aim of experiment In this experiment, we try to observe the relation between the voltage and corressponding current generated. ⢠In forward bias condition, current is constant until certain voltage is reached. Diode nomenclature and identification of polarity. To find static and dynamic resistances in both forward and reverse biased conditions for Si P-N Junction diode. An isolated pn junction makes a semiconductor diode. The graph shows the reverse V-I characteristics of the given p-n junction diode. This region deplete, of any type of free charge carrier is called as depletion region. 3 Theory of experiment The diode is a device formed from a junction of n-type and p-type semiconductor material. endobj /BitsPerComponent 8 21 0 obj << 3 0 obj << /Type /Page When an N-type material (has more free electrons) is fused with the P-type material (has more number of holes) to create a semiconductor diode, it is known as PN junction diode. /Filter /FlateDecode Find Cut In Voltage , Static And Dynamic Resistance In Forward Direction At Forward Current Of 2mA & 8mA Respectively. Silicon is preferred to diode because of ⦠Volt-ampere (V-I) characteristics of a pn junction or semiconductor diode is the curve between voltage across the junction and the current through the circuit. Characteristics of a p-n junction diode. Question: EXPERIMENT NO 2 PN JUNCTION DIODE CHARACTERISTICS 2.1 AIM To Plot The V-I Characteristics Of A PN Junction Diode In Both Forward And Reverse Directions. 14. Laboratory #1 - Diode Characteristics.pdf, National University of Computer and Emerging Sciences, Islamabad, Queensborough Community College, CUNY • ET 210, National University of Computer and Emerging Sciences, Islamabad • EE EL324, 5bf23052a73a9ccd5f3d5d82b4ba148a-original.pdf. 9
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�4����=�J��e >> Pn junction diode characteristics Lab expriment 1. However, there is one major difference. Applying a positive potential to the anode and a negative potential to the cathode of the pn junction diode establishes a forward bias condition on the diode. >> /MediaBox [0 0 595.276 841.89] There are three biasing conditions and they are: 1. The V-I characteristics or voltage-current characteristics of the p-n junction diode is shown in the below figure. jK�����z�;�D�۱����L
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1�J�M��$�F90uͮ���S��12�����]�B��n�TĬ�&��6�m��ѰE�±˴�L:�*7�z��@@� endstream Select the diode ⦠/Parent 17 0 R (vii) Aim of the PN Junction Diode Experiment To draw the static current-voltage (I â V) characteristic of a junction diode in forward bias and hence to calculate its ac and dc forward resistances. The V-I characteristics of a diode can be forward or reverse. As the applied potential is increased the depletion region width decrease and conduction of electron increase. stream It is called the V-I characteristics of a general p â n junction diode. Voltage-Current Characteristics of a PN Junction Diode To draw the voltage-current (V- I) characteristics of the PN junction diode and to determine its knee voltage and forward resistance. Experiment No: 1 P-N JUNCTION DIODE CHARACTERISTICS AIM: 1. Theory. Name Quantity Name Quantity The V-I characteristics or voltage-current characteristics of the p-n junction diode is shown in the below figure. It is called cut in voltage. (a) P-N junction (b) schematic symbol (c) diode packaging. >> endobj /Height 318 /Contents 4 0 R 11. PN Junction Diode : I-V Characteristics üThe barrier increase reduces the majority carrier diffusion to a negligible level üThe p-side electrons and n-side holes can wander into the depletion region and be swept to the other side à reverse I(nàp) üReverse bias situation àan increase of the potential hill üBeing associated with At the end of the experiment, the student should be able to Explain the structure of a P-N junction diode; Explain the function of a P-N junction diode ... V-I Characteristics of Diode. donates electron and becomes positively charged ion)region. It is one of the simplest semiconductor devices as it allows current to flow in only one direction.The diode does not behave linearly with respect to the applied voltage, and it ⦠20 0 obj << DZ���!�����x�ذ���,�]:yŔ�ή4��S�J�D�B�4WZ��C����:�8 �J����C�u"�ω&�� h)T�>Q�~��.�7Y")*��IK��5�e8���5Bj�zC The behaviour of the PN junction with regards to the potential barrierâs width produces an asymmetrical conducting two terminal device, better known as the PN Junction Diode. The circuit diagram to plot the VI characteristics of a pn junction diode is shown. Further recombination of, free carrier on both side is prevented because of the depletion voltage generated due to. It generally shows the relation between bias voltage and current of a diode. 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